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NTD6415AN, NVD6415AN
N-Channel Power MOSFET
100 V, 23 A, 55 m W
Features
? Low R DS(on)
? High Current Capability
? 100% Avalanche Tested
? AEC Q101 Qualified ? NVD6415AN
? These Devices are Pb ? Free and are RoHS Compliant
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
V (BR)DSS
100 V
http://onsemi.com
R DS(on) MAX
55 m W @ 10 V
I D MAX
(Note 1)
23 A
Parameter
Symbol
Value
Unit
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage ? Continuous
Continuous Drain Steady T C = 25 ° C
Current R q JC State
T C = 100 ° C
V DSS
V GS
I D
100
$ 20
23
16
V
V
A
N ? Channel
D
Power Dissipation
R q JC
Steady
State
T C = 25 ° C
P D
83
W
G
Pulsed Drain Current
t p = 10 m s
I DM
89
A
Operating and Storage Temperature Range
Source Current (Body Diode)
T J , T stg
I S
? 55 to
+175
23
° C
A
S
4
Single Pulse Drain ? to ? Source Avalanche
Energy (V DD = 50 Vdc, V GS = 10 Vdc, I L(pk) =
23 A, L = 0.3 mH, R G = 25 W )
Lead Temperature for Soldering
Purposes, 1/8 ″ from Case for 10 Seconds
THERMAL RESISTANCE RATINGS
Parameter
E AS
T L
Symbol
79
260
Max
mJ
° C
Unit
4
1 2
3
DPAK
CASE 369AA
STYLE 2
1
2
3
IPAK
CASE 369D
STYLE 2
Junction ? to ? Case (Drain) Steady State R q JC 1.8 ° C/W
Junction ? to ? Ambient (Note 1) R q JA 39
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
MARKING DIAGRAM
& PIN ASSIGNMENTS
4 Drain 4 Drain
1
Gate
2
Drain
3
Source
1
Gate
2
3
Source
6415AN
Y
WW
G
= Device Code
= Year
= Work Week
= Pb ? Free Package
Drain
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
? Semiconductor Components Industries, LLC, 2011
October, 2011 ? Rev. 1
1
Publication Order Number:
NTD6415AN/D
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